The global gallium nitride (GaN) device market is set to gain impetus from the high demand for fast chargers worldwide. This information is given by Fortune Business Insights™ in a new study, titled, “Gallium Nitride Device Market Size, Share & Industry Analysis, By Device Type (Opto-Semiconductor Device, Power Semiconductor Device, and RF Semiconductor Device), By Wafer Size (2-Inch Wafer, 4-Inch Wafer, and 6-Inch and Above Wafer), By Component (Transistor, Diode, Rectifier, Power IC, and Other), By Application (Light Detection & Ranging, Wireless and EV Charging, Radar and Satellite Radio Frequency, and Others), By End User (Aerospace, Defense, Healthcare, Renewables, Information and Communication Technology, and Others) and Regional Forecast, 2020-2027.” The study further mentions that the GaN device market size was USD 20.56 billion in 2019 and is projected to reach USD 28.40 billion by 2027, exhibiting a CAGR of 4.28% during the forecast period.
Impact of Russia-Ukraine War Implication
The war crisis and sanctions have put a strain on global investment, trade, and economic activity. Therefore, skepticism and uncertainty remain prevalent regarding the conflict, its potential reach, and its longevity. Accordingly, the restoration of normal relations among partners could prove be a sign of improvement. There is hardly any sector that the war has left untouched, especially aggravating the business landscape of sectors ranging from aerospace to oil & gas. Amidst prevailing challenges, stakeholders are gearing to turn adversities into opportunities. However, soaring military aid for Ukraine could provide impetus to stakeholders. Meanwhile, it is to be noted that the relevant sanction could augment operating costs and disrupt industries.
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A list of all the prominent gallium nitride device manufacturers present in the global market:
- Cree, Inc. (The U.S.)
- Infineon Technologies AG (Germany)
- Efficient Power Conversion Corporation. (The U.S.)
- EPISTAR Corporation (Taiwan)
- GaN Systems (Canada)
- MACOM (The U.S.)
- Microsemi (The U.S.)
- Mitsubishi Electric Corporation (Japan)
- NICHIA CORPORATION (Japan)
- Northrop Grumman Corporation (The U.S.)
- NXP Semiconductors. (Netherland)
- Qorvo, Inc (The U.S.)
- Texas Instruments Incorporated. (The U.S.)
- Toshiba Corporation (Japan)
How Did We Develop This Report?
We have conducted extensive primary and secondary research to gather information about various aspects of this report. Our special interviews with end user respondents and supply side respondents helped in gaining insights into the average pricing, per capita consumption trend, average spending on products, growth rate, market size, and dynamics. We have also taken information from reputed industry journals, articles published by several magazines, and press releases of firms present in the field of aerospace and defense.
Segment-
Opto-semiconductor Device Segment to Grow Rapidly Backed by Increasing Usage in Lasers
Based on device type, the opto-semiconductor device segment procured the highest gallium nitride market share in 2019. This growth is attributable to their increasing usage in various aerospace applications, such as Light Detection and Ranging (LiDAR) and pulsed lasers. Besides, they are used in optoelectronics, LEDs, lasers, photodiodes, and solar cells.
Drivers & Restraints-
Expansion of Telecommunications Domain to Accelerate Growth
The demand for energy efficient GaN devices is surging rapidly owing to the expansion of the telecommunications domain. Most of the internet service providers are nowadays focusing on providing lower latency with optical cable wires, ubiquitous connectivity, and network with higher capacity. Apart from that, the rising utilization of GaN devices in the 5G infrastructure is likely to propel the gallium nitride device market growth in the near future. However, the high cost associated with the maintenance and development of gallium nitride devices may hinder growth.
Browse In-depth Summary of This Research Insight:
https://www.fortunebusinessinsights.com/gallium-nitride-gan-devices-market-103367
Regional Insights-
High Demand for Wireless Devices to Favor Growth in Europe
Geographically, North America generated USD 7.38 billion in 2019 because of the presence of numerous prominent manufacturers, such as MACOM, Cree, Inc., Northrop Grumman Corporation, Efficient Power Conversion Corporation, Microsemi, and others in this region.
Europe, on the other hand, is anticipated to grow significantly on account of the rising demand for wireless devices in Germany, France, and the U.K. In Asia Pacific, the rising demand for gallium nitride devices from emerging nations, such as India and China would aid growth.
Competitive Landscape-
Key Companies Focus on Winning New Contracts to Intensify Competition
The global market for gallium nitride devices is highly fragmented with the presence of numerous reputed manufacturers. Most of them are focusing on achieving new contracts from significant governments, as well as private agencies to deliver their in-house products. Below are the two latest industry developments:
- June 2020: Raytheon Missiles & Defense provided a contract worth USD 2.3 billion to the U.S. Missile Defense Agency (MDA). The latter will deliver seven GaN-based Army Navy/Transportable Radar Surveillance (AN/TPY-2) units. It is a part of the company’s Terminal High Altitude Area Defense (THAAD) system.
- July 2019: Transphorm announced a new contract worth USD 18.5 million from the U.S. Department of Defense (DoD) Office of Naval Research (ONR). It includes a Base Program that is aimed at commercializing nitrogen polar GaN.
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